Title : 
A model for evaluating cumulative oxide damage from multiple plasma processes
         
        
            Author : 
Noguchi, Ko ; Matsumoto, Akira ; Oda, Noriaki
         
        
            Author_Institution : 
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
         
        
        
        
        
        
            Abstract : 
This paper reports a model for evaluating the cumulative oxide damage caused by multiple plasma processes. By considering dependence of the charging current on the antenna size, the damage to a MOS device with various antenna configurations is evaluated, and is compared with the measured data. It is shown that the plasma charging current is a sub-linear function of the antenna size. Because of this characteristic, cumulative oxide damage becomes smaller than a simple sum when the antenna is shared among multiple layers of antenna conductors. A modified antenna rule is proposed, and a realistic antenna design guideline is obtained
         
        
            Keywords : 
MOSFET; failure analysis; plasma materials processing; semiconductor device reliability; semiconductor process modelling; surface treatment; MOS device; antenna design guideline; antenna size; charging current; cumulative oxide damage; modified antenna rule; multiple layers; multiple plasma processes; plasma charging current; Circuits; Conductors; MOS devices; National electric code; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Ultra large scale integration;
         
        
        
        
            Conference_Titel : 
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
         
        
            Conference_Location : 
San Jose, CA
         
        
            Print_ISBN : 
0-7803-5860-0
         
        
        
            DOI : 
10.1109/RELPHY.2000.843941