Title :
A W-band current combined power amplifier with 14.8dBm Psat and 9.4% maximum PAE in 65nm CMOS
Author :
Xu, Zhiwei ; Gu, Qun Jane ; Chang, Mau-Chung Frank
Author_Institution :
HRL Labs., Malibu, CA, USA
Abstract :
We present a 101-117GHz power amplifier (PA) using two way current power combiner in 65nm bulk CMOS. It delivers up to 14.8dBm saturated output power with over 14dB power gain and better than 9.4% power added efficiency (PAE), which also achieves better than 11.6dBm output P1dB. The PA features three stage transformer coupled differential architecture with integrated input and output baluns. To ensure the stability and improve efficiency, the PA first two stages adopt cascode structure and the last stage utilizes common source structure. A current power combiner is employed to combine the power from two separate PAs. The entire PA core occupies 0.106 mm2 chip area and dissipates about 200mW.
Keywords :
CMOS integrated circuits; baluns; field effect MIMIC; millimetre wave power amplifiers; power combiners; W-band power amplifier; baluns; bulk CMOS integrated circuit; common source structure; current combined power amplifier; current power combiner; frequency 101 GHz to 117 GHz; millimeter wave power amplifier; size 65 nm; three stage transformer; CMOS integrated circuits; CMOS technology; Frequency measurement; Gain; Power amplifiers; Power combiners; Power generation; Adaptive Bias; CMOS; PAE; Power Amplifier; Power Combiner; Saturated Output Power; W-band;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-8293-1
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2011.5940619
