Title :
Si/SiGe p-Channel MOSFETs
Author :
Subbanna, S. ; Kesan, V.P. ; Tejwani, M.J. ; Restle, P.J. ; Mis, D.J. ; Iyer, S.S.
Author_Institution :
IBM Research Division T.J. Watson Research Center, NY
Keywords :
Epitaxial layers; Germanium alloys; Germanium silicon alloys; Interface states; Lead compounds; MOSFET circuits; Optimal control; Silicon germanium; Temperature; Transconductance;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.706011
