DocumentCode
2016722
Title
Si/SiGe p-Channel MOSFETs
Author
Subbanna, S. ; Kesan, V.P. ; Tejwani, M.J. ; Restle, P.J. ; Mis, D.J. ; Iyer, S.S.
Author_Institution
IBM Research Division T.J. Watson Research Center, NY
fYear
1991
fDate
28-30 May 1991
Firstpage
103
Lastpage
104
Keywords
Epitaxial layers; Germanium alloys; Germanium silicon alloys; Interface states; Lead compounds; MOSFET circuits; Optimal control; Silicon germanium; Temperature; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location
Oiso, Japan
Type
conf
DOI
10.1109/VLSIT.1991.706011
Filename
706011
Link To Document