Title :
A diamond-microchip GaInNAs VECSEL operating at 1315 nm
Author :
Smith, S.A. ; Hopkins, J.-M. ; Hastie, J.E. ; Calvez, S. ; Kemp, Andreas J. ; Burns, Dave ; Dawson, Martin D.
Author_Institution :
Inst. of Photonics, Strathclyde Univ., Glasgow, UK
Abstract :
We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.
Keywords :
III-V semiconductors; bonding processes; diamond; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; laser transitions; microchip lasers; optical pumping; semiconductor lasers; surface emitting lasers; 1315 nm; C; GaInNAs; capillary bonding; dielectric-mirror-coated diamond heatspreader; diode-pumped GaInNAs VECSEL; microchip vertical external-cavity surface-emitting semiconductor laser; Dielectrics; Gallium arsenide; Laser excitation; Microchip lasers; Optical pumping; Optical surface waves; Pump lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363245
