A power-combined switched-capacitor power amplifier in 90nm CMOS

Author

Yoo, Sang-Min ; Walling, Jeffrey S. ; Woo, Eum-Chan ; Allstot, David J.

Author_Institution

Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA

fYear

2011

fDate

5-7 June 2011

Firstpage

1

Lastpage

4

Abstract

A digitally-controlled switched-capacitor RF power amplifier (SCPA) is implemented with a transformer-based power-combiner in 90nm CMOS. The individual SCPA cores can be controlled to provide high average output power and linearity in an “all-switching” mode or increased dynamic range in a “sequential-switching” mode. The SCPA delivers a peak (average) output power of 27.0 (20.3) dBm with a peak (average) PAE of 26% (15.1%) for a 64 QAM OFDM modulated signal with a measured EVM of 3.8% in the 2.4 GHz band.

Keywords

CMOS analogue integrated circuits; UHF power amplifiers; capacitors; switched capacitor networks; CMOS; QAM OFDM modulated signal; all-switching mode; digitally-controlled switched-capacitor RF power amplifier; frequency 2.4 GHz; power-combined switched-capacitor power amplifier; sequential-switching mode; size 90 nm; transformer-based power-combiner; CMOS integrated circuits; Capacitors; Couplings; Power amplifiers; Power generation; Radio frequency; Switches; CMOS integrated circuits; EER; polar transmitters; power amplifiers; power combining circuits; switched capacitor circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE

Conference_Location

Baltimore, MD

ISSN

1529-2517

Print_ISBN

978-1-4244-8293-1

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2011.5940622

Filename

5940622