• DocumentCode
    2016920
  • Title

    Salicidation Issue in 65nm Technology Development

  • Author

    Tan, Hong ; Tan, P.K. ; Hendarto, Erwin ; Toh, S.L. ; Wang, Q.F. ; Cai, J.L. ; Deng, Qingzhong ; Ng, T.H. ; Goh, Y.W. ; Mai, Z.H. ; Lam, James

  • Author_Institution
    Chartered Semicond. Mfg. Ltd., Singapore
  • fYear
    2007
  • fDate
    11-13 July 2007
  • Abstract
    NiSi has replaced CoSi2 as the salicide material for 65 nm technology and beyond mainly due to its low salicide resistance for the narrow line width structures. However, it may bring along unwanted salicidation, resulting in failed transistors. This paper highlights how unwanted salicidation, also known as Ni piping, is successfully identified by physical and electrical failure analysis techniques.
  • Keywords
    cobalt compounds; failure analysis; nanotechnology; nickel compounds; CoSi2; CoSi2 - Binary; Ni piping; NiSi; NiSi - Binary; electrical failure analysis; failed transistors; nanotechnology; narrow line width structures; physical failure analysis; salicidation; salicide material; salicide resistance; size 65 nm; CMOS technology; Electron microscopy; Failure analysis; Random access memory; Scanning electron microscopy; Semiconductor materials; Silicon; Space technology; Voltage; Wood industry;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
  • Conference_Location
    Bangalore
  • Print_ISBN
    978-1-4244-1014-9
  • Type

    conf

  • DOI
    10.1109/IPFA.2007.4378055
  • Filename
    4378055
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2016920