Title :
Salicidation Issue in 65nm Technology Development
Author :
Tan, Hong ; Tan, P.K. ; Hendarto, Erwin ; Toh, S.L. ; Wang, Q.F. ; Cai, J.L. ; Deng, Qingzhong ; Ng, T.H. ; Goh, Y.W. ; Mai, Z.H. ; Lam, James
Author_Institution :
Chartered Semicond. Mfg. Ltd., Singapore
Abstract :
NiSi has replaced CoSi2 as the salicide material for 65 nm technology and beyond mainly due to its low salicide resistance for the narrow line width structures. However, it may bring along unwanted salicidation, resulting in failed transistors. This paper highlights how unwanted salicidation, also known as Ni piping, is successfully identified by physical and electrical failure analysis techniques.
Keywords :
cobalt compounds; failure analysis; nanotechnology; nickel compounds; CoSi2; CoSi2 - Binary; Ni piping; NiSi; NiSi - Binary; electrical failure analysis; failed transistors; nanotechnology; narrow line width structures; physical failure analysis; salicidation; salicide material; salicide resistance; size 65 nm; CMOS technology; Electron microscopy; Failure analysis; Random access memory; Scanning electron microscopy; Semiconductor materials; Silicon; Space technology; Voltage; Wood industry;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-1014-9
DOI :
10.1109/IPFA.2007.4378055
