DocumentCode :
2016946
Title :
Graded SiGe-Channel Modulation-Doped p-Mosfets
Author :
Verdonckt-Vandebroek, S. ; Crabbe, E.F. ; Meyerson, B.S. ; Harame, D.L. ; Restle, P.J. ; Stork, J.M.C. ; Megdanis, A.C. ; Stanis, C.L. ; Bright, A.A. ; Kroesen, G.M.W. ; Warren, A.C.
Author_Institution :
IBM Research Division, New York
fYear :
1991
fDate :
28-30 May 1991
Firstpage :
105
Lastpage :
106
Keywords :
Boron; Capacitance; Degradation; Epitaxial layers; Fabrication; Germanium silicon alloys; Insulation; MOSFET circuits; Silicon germanium; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
Type :
conf
DOI :
10.1109/VLSIT.1991.706012
Filename :
706012
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2016946
