DocumentCode
2016946
Title
Graded SiGe-Channel Modulation-Doped p-Mosfets
Author
Verdonckt-Vandebroek, S. ; Crabbe, E.F. ; Meyerson, B.S. ; Harame, D.L. ; Restle, P.J. ; Stork, J.M.C. ; Megdanis, A.C. ; Stanis, C.L. ; Bright, A.A. ; Kroesen, G.M.W. ; Warren, A.C.
Author_Institution
IBM Research Division, New York
fYear
1991
fDate
28-30 May 1991
Firstpage
105
Lastpage
106
Keywords
Boron; Capacitance; Degradation; Epitaxial layers; Fabrication; Germanium silicon alloys; Insulation; MOSFET circuits; Silicon germanium; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location
Oiso, Japan
Type
conf
DOI
10.1109/VLSIT.1991.706012
Filename
706012
Link To Document