DocumentCode :
2017104
Title :
Proof-of-Concept Structure for Investigation of Successive Soft Gate Oxide Breakdowns in Two Dimensions
Author :
Kaczer, Ben ; Fernandez, Raul ; Nackaert, A. ; Chiarella, T. ; Groeseneken, Guido
Author_Institution :
Kapeldreef, Leuven
fYear :
2007
fDate :
11-13 July 2007
Abstract :
In this paper we describe a structure designed and fabricated for the purpose of locating successive SBD´s in 2D. It is shown that the original BD location method can be readily extended to 2D, for both accumulation (Degraeve et al., 2001) and inversion (Crupi et al., 2005). It is concluded that the locations of two successive SBD´s can be readily distinguished and that subsequent SBD events do not appear to be correlated within the analysis of this work. Limitations in downscaling the structure are also discussed.
Keywords :
MOSFET; semiconductor device breakdown; semiconductor device reliability; BD location; MOSFET; accumulation region; inversion region; proof-of-concept structure; successive soft gate oxide breakdowns; Acceleration; CMOS technology; Circuits; Electric breakdown; Electrons; FETs; Leakage current; Spontaneous emission; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-1014-9
Type :
conf
DOI :
10.1109/IPFA.2007.4378063
Filename :
4378063
Link To Document :
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