Title :
A 60µW LNA for 2.4 GHz wireless sensors network applications
Author :
Taris, T. ; Begueret, JB ; Deval, Y.
Author_Institution :
IMS Lab., Univ. of Bordeaux, Talence, France
Abstract :
This work reports on the implementation of a 2.4 GHz ultra low power (ULP) low noise amplifier (LNA) in a standard CMOS 0.13 μm process. The proposed design methodology consists in optimizing the tradeoff between RF performances and current consumption of the MOS transistor. The supply of the circuit controlled by a 3bits DAC varies from 0.4 to 0.6 V. This digital tuning allows maximizing the figure of merit of the LNA. The approach yields the operating point within the sweet spot region of the amplifying transistors. Experimental results of the circuit indicate a power dissipation of 60 μW@0.4V, a noise figure of 5.3 dB, and a forward gain of 13.1 dB. The IIP3 and ICP1 are -12 dBm and -19 dBm, respectively. This works aims the development of a complete RF front end for micro-watt radio.
Keywords :
CMOS integrated circuits; MOSFET; UHF amplifiers; UHF integrated circuits; digital-analogue conversion; low noise amplifiers; low-power electronics; wireless sensor networks; DAC; LNA; MOS transistor; amplifying transistors; complete RF front; digital tuning; frequency 2.4 GHz; gain 13.1 dB; microwatt radio; noise figure 5.3 dB; power 60 muW; size 0.13 mum; standard CMOS process; ultra low power low noise amplifier; voltage 0.4 V to 0.6 V; wireless sensors network applications; word length 3 bit; CMOS integrated circuits; Gain; Impedance matching; Noise measurement; Power demand; Radio frequency; Wireless sensor networks; CMOS; LNA; Wireless Sensor Network (WSN) applications; ultra low power RF;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-8293-1
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2011.5940633