60GHz antenna integrated on High Resistivity silicon technologies targeting WHDMI applications

Author

Titz, D. ; Pilard, R. ; Ferrero, F. ; Gianesello, F. ; Gloria, D. ; Luxey, C. ; Brachat, P. ; Jacquemod, G.

Author_Institution

LEAT, Univ. de Nice-Sophia-Antipolis, Valbonne, France

fYear

2011

fDate

5-7 June 2011

Firstpage

1

Lastpage

4

Abstract

During past years, various research team have been implied in the development of 60GHz chipset solution, using both BiCMOS or advanced CMOS technologies. But for the 60GHz market to flourish, not only low cost RFICs are required, low cost antennas and packages also are. In order to address these issues, we review in this paper achievable antenna performance using High Resistivity (HR) silicon technologies, by discussing possible integration schemes, antenna design and 3D on wafer characterization. Antenna gain of 3.9 dBi @ 60GHz has been measured making HR Si a promising technbology to address applications packaged in millimeter-wave low cost technology.

Keywords

BiCMOS integrated circuits; elemental semiconductors; millimetre wave antennas; radiofrequency integrated circuits; silicon; BiCMOS technology; RFIC; Si; WHDMI applications; advanced CMOS technology; antenna design; frequency 60 GHz; high resistivity silicon technology; millimeter wave antenna; wafer characterization; Antenna measurements; Antenna radiation patterns; Gain measurement; Probes; Silicon; Three dimensional displays; BiCMOS integrated circuits; antenna radiation patterns; millimeter wave integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE

Conference_Location

Baltimore, MD

ISSN

1529-2517

Print_ISBN

978-1-4244-8293-1

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2011.5940637

Filename

5940637