DocumentCode :
2017219
Title :
60GHz antenna integrated on High Resistivity silicon technologies targeting WHDMI applications
Author :
Titz, D. ; Pilard, R. ; Ferrero, F. ; Gianesello, F. ; Gloria, D. ; Luxey, C. ; Brachat, P. ; Jacquemod, G.
Author_Institution :
LEAT, Univ. de Nice-Sophia-Antipolis, Valbonne, France
fYear :
2011
fDate :
5-7 June 2011
Firstpage :
1
Lastpage :
4
Abstract :
During past years, various research team have been implied in the development of 60GHz chipset solution, using both BiCMOS or advanced CMOS technologies. But for the 60GHz market to flourish, not only low cost RFICs are required, low cost antennas and packages also are. In order to address these issues, we review in this paper achievable antenna performance using High Resistivity (HR) silicon technologies, by discussing possible integration schemes, antenna design and 3D on wafer characterization. Antenna gain of 3.9 dBi @ 60GHz has been measured making HR Si a promising technbology to address applications packaged in millimeter-wave low cost technology.
Keywords :
BiCMOS integrated circuits; elemental semiconductors; millimetre wave antennas; radiofrequency integrated circuits; silicon; BiCMOS technology; RFIC; Si; WHDMI applications; advanced CMOS technology; antenna design; frequency 60 GHz; high resistivity silicon technology; millimeter wave antenna; wafer characterization; Antenna measurements; Antenna radiation patterns; Gain measurement; Probes; Silicon; Three dimensional displays; BiCMOS integrated circuits; antenna radiation patterns; millimeter wave integrated circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
Conference_Location :
Baltimore, MD
ISSN :
1529-2517
Print_ISBN :
978-1-4244-8293-1
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2011.5940637
Filename :
5940637
Link To Document :
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