Integration of Antenna-on-Chip and signal detectors for applications from RF to THz frequency range in SiGe technology

Author

Wane, Sidina ; Van Heijster, Rob ; Bardy, Serge

Author_Institution

NXP-Semicond., Caen, France

fYear

2011

fDate

5-7 June 2011

Firstpage

1

Lastpage

4

Abstract

This paper presents design solutions for signal detectors and Antenna on-Chip (AoC) using a state-of-the-art (SiGe) BiCMOS technology. Both CML (Current-Mode-Logic) and CMOS detectors are designed, fabricated and compared in terms of their performances such as conversion gain and robustness against process variations. Wide-band Antenna-on-Chip working in the range 60GHz to 94 GHz are designed, fabricated and characterized. Several Antenna-on-Chip structures are proposed to evaluate bandwidth and radiation efficiency performances. Near-field antenna couplings are experimentally evaluated using different technology variants with different silicon substrate thickness values. Schottky diodes are designed and characterized for feasibility analysis of THz detection, mixing and down-conversion.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; Schottky diodes; bipolar MIMIC; broadband antennas; current-mode logic; field effect MIMIC; millimetre wave antennas; AoC; BiCMOS technology; CML detector; CMOS detector; RF frequency range application; Schottky diode; Si; SiGe; THz detection; THz frequency range application; antenna-on-chip integration; current-mode-logic detector; frequency 60 GHz to 94 GHz; near-field antenna coupling; radiation efficiency performance; signal detector; Antennas; BiCMOS integrated circuits; CMOS integrated circuits; Detectors; Schottky diodes; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE

Conference_Location

Baltimore, MD

ISSN

1529-2517

Print_ISBN

978-1-4244-8293-1

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2011.5940639

Filename

5940639