Title :
Failure Mechanisms of AIN based RF-MEMS Switches Under DC and ESD Stresses
Author :
Ruan, Jiayang ; Nolhier, Nicolas ; Bafleur, Marise ; Bary, L. ; Mauran, Nicolas ; Coccetti, Fabio ; Lisec, Thomas ; Plana, R.
Author_Institution :
LAAS-CNRS, Toulouse
Abstract :
Today, we report only one paper concerning this issue and we believe that it deserves to go deeper in detail concerning the physic of failure related to ESD stresses. The second part of this paper is devoted to the reliability investigation of AIN-based capacitive switches under ESD stresses.
Keywords :
III-V semiconductors; aluminium compounds; discharges (electric); microswitches; semiconductor device reliability; semiconductor switches; wide band gap semiconductors; AlN; AlN - Interface; DC stress; ESD stress; RF MEMS switches; capacitive switches; failure mechanisms; reliability; Biomembranes; Dielectric materials; Electrostatic discharge; Failure analysis; Gold; Radio frequency; Radiofrequency microelectromechanical systems; Silicon; Stress; Switches;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-1014-9
DOI :
10.1109/IPFA.2007.4378070
