DocumentCode
2017318
Title
Failure Mechanisms of AIN based RF-MEMS Switches Under DC and ESD Stresses
Author
Ruan, Jiayang ; Nolhier, Nicolas ; Bafleur, Marise ; Bary, L. ; Mauran, Nicolas ; Coccetti, Fabio ; Lisec, Thomas ; Plana, R.
Author_Institution
LAAS-CNRS, Toulouse
fYear
2007
fDate
11-13 July 2007
Abstract
Today, we report only one paper concerning this issue and we believe that it deserves to go deeper in detail concerning the physic of failure related to ESD stresses. The second part of this paper is devoted to the reliability investigation of AIN-based capacitive switches under ESD stresses.
Keywords
III-V semiconductors; aluminium compounds; discharges (electric); microswitches; semiconductor device reliability; semiconductor switches; wide band gap semiconductors; AlN; AlN - Interface; DC stress; ESD stress; RF MEMS switches; capacitive switches; failure mechanisms; reliability; Biomembranes; Dielectric materials; Electrostatic discharge; Failure analysis; Gold; Radio frequency; Radiofrequency microelectromechanical systems; Silicon; Stress; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location
Bangalore
Print_ISBN
978-1-4244-1014-9
Type
conf
DOI
10.1109/IPFA.2007.4378070
Filename
4378070
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