DocumentCode :
2017359
Title :
Trends in memory technology - reliability perspectives, challenges and opportunities
Author :
Mouli, C. ; Prall, Kirk ; Roberts, Clive
Author_Institution :
Micron Technol. Inc, Boise
fYear :
2007
fDate :
11-13 July 2007
Abstract :
As DRAM and NAND cells are rapidly scaled deep into the nanoscale regime, meeting design and reliability requirements require deeper understanding of single-cell characteristics. Some of the challenges are common between these technologies while some are unique. New materials and cell structures are being introduced to address some of these issues and provide further scaling opportunities.
Keywords :
DRAM chips; NAND circuits; flash memories; integrated circuit reliability; DRAM; NAND cells; memory technology; reliability; Capacitance; Character generation; Costs; Electrons; Interference; Kirk field collapse effect; Nonvolatile memory; Paper technology; Random access memory; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-1014-9
Type :
conf
DOI :
10.1109/IPFA.2007.4378072
Filename :
4378072
Link To Document :
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