Title :
Trends in memory technology - reliability perspectives, challenges and opportunities
Author :
Mouli, C. ; Prall, Kirk ; Roberts, Clive
Author_Institution :
Micron Technol. Inc, Boise
Abstract :
As DRAM and NAND cells are rapidly scaled deep into the nanoscale regime, meeting design and reliability requirements require deeper understanding of single-cell characteristics. Some of the challenges are common between these technologies while some are unique. New materials and cell structures are being introduced to address some of these issues and provide further scaling opportunities.
Keywords :
DRAM chips; NAND circuits; flash memories; integrated circuit reliability; DRAM; NAND cells; memory technology; reliability; Capacitance; Character generation; Costs; Electrons; Interference; Kirk field collapse effect; Nonvolatile memory; Paper technology; Random access memory; Threshold voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-1014-9
DOI :
10.1109/IPFA.2007.4378072