Influence of electroplating current density on through silicon via filling

TSV (through silicon via) filling is one of the key challenges for 3D integration. Non-uniform distribution of current density inside the high aspect ratio via often leads to pinch-off effect which seriously harms interconnect functionality and reliability. An additives system, consisting of an accelerator (SPS), a suppressor (PEG), a leveler (JGB) and chloride ions, is common choice for bottom-up filling of TSV. In this paper, a numerical model was built on the basis of experimental polarization curve to simulate copper electrodeposition process of TSV. Via filling with three different electroplating current density is simulated and analyzed using this model. The good fitting of simulation profiles toward experiment results proves this method effective for copper filling results prediction.