Title :
Aging of 40nm MOSFET RF parameters under RF conditions from characterization to compact modeling for RF design
Author :
Negre, Laurent ; Roy, David ; Cacho, Florian ; Scheer, Patrick ; Boret, Samuel ; Zaka, Alban ; Gloria, Daniel ; Ghibaudo, Gerard
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
In the framework of MOSFET reliability for mixed-analog application, a deep investigation of RF parameters degradation is performed. An innovative flow, composed of DC and RF stress with DC and RF aging characterization, is presented. Degradation kinetics of main parameters are physically explained and modeled using PSP compact model to predict the behavior of stressed devices.
Keywords :
MOSFET; ageing; integrated circuit design; integrated circuit modelling; integrated circuit reliability; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; DC stress; MOSFET RF parameters; MOSFET reliability; PSP compact model; RF design; RF stress; compact modeling; mixed-analog application; size 40 nm; Aging; Degradation; Integrated circuit modeling; MOSFET circuits; Radio frequency; Scattering parameters; Stress; MOSFET; hot carrier; model; radio frequency; reliability; stress;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-8293-1
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2011.5940645
