Title :
ESD protection for sub-45 nm MugFET technology
Author :
Natarajan, Mahadevan Iyer ; Thijs, Steven ; Tremouilles, David ; Linten, D. ; Collaert, Nadine ; Jurczak, Malgorzata ; Groeseneken, Guido
Author_Institution :
Silterra Malaysia Sdn. Bhd., Kulim
Abstract :
From the design point of view, while such technology options may result in increased transistor performance, the ability to achieve sufficient product reliability is to be addressed. Among the industry accepted reliability requirements, electrostatic discharge (ESD) reliability assessment is the focus of this work.
Keywords :
MOSFET; electrostatic discharge; nanoelectronics; semiconductor device reliability; ESD protection; MugFET technology; electrostatic discharge reliability; product reliability; size 45 nm; CMOS process; CMOS technology; Diodes; Electrostatic discharge; High-K gate dielectrics; MOS devices; Protection; Robustness; Silicon; Stress;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-1014-9
DOI :
10.1109/IPFA.2007.4378077
