DocumentCode :
2017517
Title :
High Performance Shallow Junction Well Transistor (SJET)
Author :
Mizuno, T. ; Asao, Y. ; Koga, J.
Author_Institution :
TOSHIBA Corp., Japan
fYear :
1991
fDate :
28-30 May 1991
Firstpage :
109
Lastpage :
110
Keywords :
Capacitance; Degradation; Fabrication; MOSFET circuits; Semiconductor thin films; Substrates; Threshold voltage; Ultra large scale integration; Very large scale integration; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
Type :
conf
DOI :
10.1109/VLSIT.1991.706014
Filename :
706014
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2017517
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