DocumentCode
2017517
Title
High Performance Shallow Junction Well Transistor (SJET)
Author
Mizuno, T. ; Asao, Y. ; Koga, J.
Author_Institution
TOSHIBA Corp., Japan
fYear
1991
fDate
28-30 May 1991
Firstpage
109
Lastpage
110
Keywords
Capacitance; Degradation; Fabrication; MOSFET circuits; Semiconductor thin films; Substrates; Threshold voltage; Ultra large scale integration; Very large scale integration; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location
Oiso, Japan
Type
conf
DOI
10.1109/VLSIT.1991.706014
Filename
706014
Link To Document