Title :
Impact of Front End Processing on Gate Oxide Reliability
Author :
Ahmed, Khandakar
Author_Institution :
Inc., Sunnyvale
Abstract :
In the past decade, SiON films with N content less than 15% at. have enabled scaling of CMOS devices down to 65nm node. The introduction of new materials (e.g. high-k, metal electrodes) and integration flows resulted in new device and circuit reliability issues. Innovation in process, integration and manufacturing equipment, in addition to acceleration of understanding of reliability physics for these new materials, are necessary in order to meet product reliability and performance specifications.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit reliability; oxygen compounds; semiconductor device reliability; silicon compounds; CMOS devices; SiON; SiON - Interface; circuit reliability; front end processing; gate oxide reliability; integration equipment; manufacturing equipment; process innovation; product reliability; reliability physics; size 65 nm; Acceleration; Electrodes; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Integrated circuit reliability; Manufacturing processes; Materials reliability; Physics; Technological innovation;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-1014-9
DOI :
10.1109/IPFA.2007.4378078
