Title :
Extensive Reliability Analysis of Tungsten Dot NC Devices Embedded in HfAlO High-k Dielectric under NAND (FN/FN) Operation
Author :
Singh, Praveen Kumar ; Nainani, Aneesh
Author_Institution :
IIT Bombay, Mumbai
Abstract :
In this work we present an extensive reliability and performance evaluation of tungsten dot nanocrystal (NC) devices under NAND mode of operation. Improvement in performance and reliability was observed with scaling W and L. The use of better high-k processing is proposed to improve the reliability. We also propose a numerical simulation model for NC memory devices using transient capacitive charging model. The approach is very generic and computationally less extensive than the previous works.
Keywords :
NAND circuits; circuit reliability; flash memories; hafnium compounds; high-k dielectric thin films; tungsten; HfAlO - Interface; HfAlO high-k dielectric; NAND (FN/FN) operation; NC memory devices; extensive reliability analysis; high-k processing; transient capacitive charging model; tungsten dot NC devices; tungsten dot nanocrystal devices; Dielectric devices; Dielectric materials; Fabrication; Flash memory; High K dielectric materials; High-K gate dielectrics; Nanocrystals; Nonvolatile memory; Performance analysis;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-1014-9
DOI :
10.1109/IPFA.2007.4378084
