Title :
1.3 and 1.5 μm InP-based vertical cavity surface emitting lasers
Author :
Nishiyama, Nobuhiko ; Caneau, Catherine ; Zah, Chung-en
Author_Institution :
Corning Inc., NY, USA
Abstract :
1.3 μm and 1.5 μm InP-based VCSELs with AlGaInAs/InP DBR have been successfully realized. For both wavelengths, over 1 mW single mode power at room temperature, >100 °C operation and 10 Gbit/s transmission through 10+ km have been achieved.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser modes; laser transitions; optical communication equipment; quantum well lasers; surface emitting lasers; 1.3 mum; 1.5 mum; 10 Gbit/s; AlGaInAs-InP; AlGaInAs/InP DBR; VCSEL; vertical cavity surface emitting lasers; Bit error rate; Distributed Bragg reflectors; Electrons; Parasitic capacitance; Photonics; RNA; Signal analysis; Surface emitting lasers; Temperature; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363281
