• DocumentCode
    2017749
  • Title

    1.3 and 1.5 μm InP-based vertical cavity surface emitting lasers

  • Author

    Nishiyama, Nobuhiko ; Caneau, Catherine ; Zah, Chung-en

  • Author_Institution
    Corning Inc., NY, USA
  • Volume
    1
  • fYear
    2004
  • fDate
    7-11 Nov. 2004
  • Firstpage
    402
  • Abstract
    1.3 μm and 1.5 μm InP-based VCSELs with AlGaInAs/InP DBR have been successfully realized. For both wavelengths, over 1 mW single mode power at room temperature, >100 °C operation and 10 Gbit/s transmission through 10+ km have been achieved.
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser modes; laser transitions; optical communication equipment; quantum well lasers; surface emitting lasers; 1.3 mum; 1.5 mum; 10 Gbit/s; AlGaInAs-InP; AlGaInAs/InP DBR; VCSEL; vertical cavity surface emitting lasers; Bit error rate; Distributed Bragg reflectors; Electrons; Parasitic capacitance; Photonics; RNA; Signal analysis; Surface emitting lasers; Temperature; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-8557-8
  • Type

    conf

  • DOI
    10.1109/LEOS.2004.1363281
  • Filename
    1363281
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2017749