Title :
Novel Shallow Counter Doping Process and High Performance Buried Channel pMOSFET Using Boron Diffusion Through Oxide
Author :
Toyoshima, Y. ; Eguchi, T. ; Hayashida, H. ; Hashimoto, K.
Author_Institution :
Semiconductor Device Engineering Laboratory, Toshiba Corporation, Japan
Keywords :
Annealing; Boron; CMOS technology; Counting circuits; Hydrogen; MOSFET circuits; Semiconductor device doping; Semiconductor devices; Threshold voltage; Voltage control;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.706015
