A fully-integrated K-band CMOS power amplifier with Psat of 23.8 dBm and PAE of 25.1 %

Author

Kawano, Yoichi ; Mineyama, Akiko ; Suzuki, Toshihide ; Sato, Masaru ; Hirose, Tatsuya ; Joshin, Kazukiyo

Author_Institution

Fujitsu Ltd., Atsugi, Japan

fYear

2011

fDate

5-7 June 2011

Firstpage

1

Lastpage

4

Abstract

A fully-integrated K-band differential power amplifier was designed in 65 nm CMOS. The power amplifier comprised of the 2-stage cascode configuration has the matching networks based on the transformer. To match the impedances, turn ratios of each transformer were designed to be 1:1 for the input stage, 2:1 for the inter stage, and 1:1.5 for the output stage, respectively. The saturation power of more than 20 dBm was obtained in the band between 16 GHz and 25 GHz. The peak value of the saturation power was 23.8 dBm, and the power added efficiency (PAE) was 25.1 % at 19 GHz. The chip occupied area including the DC and RF pads is 1.2 × 0.8 mm.

Keywords

CMOS integrated circuits; field effect MIMIC; field effect MMIC; microwave power amplifiers; millimetre wave power amplifiers; DC pads; K-band CMOS power amplifier; RF pads; differential power amplifier; efficiency 25.1 percent; frequency 16 GHz to 25 GHz; matching networks; rwo-stage cascode configuration; size 65 nm; transformer design; CMOS integrated circuits; Frequency measurement; Gain; Impedance; K-band; Logic gates; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE

Conference_Location

Baltimore, MD

ISSN

1529-2517

Print_ISBN

978-1-4244-8293-1

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2011.5940655

Filename

5940655