DocumentCode
2017797
Title
Room temperature cw operation on 1.3 μm Sb-based quantum dot lasers and VCSELs
Author
Yamamoto, Naokatsu ; Akahane, Kouichi ; Gozu, Shin-Ichirou ; Ohtani, Naoki
Author_Institution
Nat. Inst. of Information & Communcations Technol., Tokyo, Japan
Volume
1
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
406
Abstract
Continuous-wave laser operation at wavelengths of over 1.3-μm at room temperature was successfully demonstrated using an edge-emitting Sb-based InGaSb quantum dot laser diode (QD-LD) and an InGaSb-QD vertical-cavity surface-emitting laser (QD-VCSEL) fabricated on GaAs substrates.
Keywords
III-V semiconductors; gadolinium compounds; indium compounds; laser transitions; optical communication equipment; quantum dot lasers; surface emitting lasers; 1.3 mum; 20 degC; InGaSb; InGaSb-QD vertical-cavity surface-emitting laser; edge-emitting Sb-based InGaSb quantum dot laser diode; room temperature cw operation; Diode lasers; Gallium arsenide; Quantum dot lasers; Semiconductor lasers; Substrates; Surface emitting lasers; Surface waves; Temperature; US Department of Transportation; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363283
Filename
1363283
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