• DocumentCode
    2017822
  • Title

    A fully-integrated efficient CMOS inverse Class-D power amplifier for digital polar transmitters

  • Author

    Chowdhury, Debopriyo ; Thyagarajan, Siva V. ; Ye, Lu ; Alon, Elad ; Niknejad, Ali M.

  • Author_Institution
    Dept. of EECS, UC Berkeley, Berkeley, CA, USA
  • fYear
    2011
  • fDate
    5-7 June 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We demonstrate a fully-integrated, high-efficiency inverse Class-D power amplifier in 65nm CMOS process. Such efficient switching amplifiers can form the core of digital polar transmitters. A comprehensive analytical framework has been developed to reveal the design trade-offs and enable efficiency maximization. Operating from a 1-V supply, the PA delivers 22dBm output power with a high efficiency of 44% without using any RF process options. The PA efficiency is comparable to that of state-of-the-art CMOS switching PAs, though it uses a much simpler output matching network. The PA has been integrated into a mixed-signal polar transmitter and meets the 802.11g (54Mbps 64QAM OFDM) spectral mask and EVM requirements with more than 18% average efficiency.
  • Keywords
    CMOS analogue integrated circuits; power amplifiers; transmitters; 802.11g spectral mask; CMOS inverse class-D power amplifier; CMOS switching PA; EVM requirement; RF process; digital polar transmitters; efficiency 44 percent; mixed-signal polar transmitter; size 65 nm; switching amplifiers; voltage 1 V; CMOS integrated circuits; Capacitance; Inductance; Power generation; Switches; Transistors; Transmitters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
  • Conference_Location
    Baltimore, MD
  • ISSN
    1529-2517
  • Print_ISBN
    978-1-4244-8293-1
  • Electronic_ISBN
    1529-2517
  • Type

    conf

  • DOI
    10.1109/RFIC.2011.5940656
  • Filename
    5940656