DocumentCode :
2017822
Title :
A fully-integrated efficient CMOS inverse Class-D power amplifier for digital polar transmitters
Author :
Chowdhury, Debopriyo ; Thyagarajan, Siva V. ; Ye, Lu ; Alon, Elad ; Niknejad, Ali M.
Author_Institution :
Dept. of EECS, UC Berkeley, Berkeley, CA, USA
fYear :
2011
fDate :
5-7 June 2011
Firstpage :
1
Lastpage :
4
Abstract :
We demonstrate a fully-integrated, high-efficiency inverse Class-D power amplifier in 65nm CMOS process. Such efficient switching amplifiers can form the core of digital polar transmitters. A comprehensive analytical framework has been developed to reveal the design trade-offs and enable efficiency maximization. Operating from a 1-V supply, the PA delivers 22dBm output power with a high efficiency of 44% without using any RF process options. The PA efficiency is comparable to that of state-of-the-art CMOS switching PAs, though it uses a much simpler output matching network. The PA has been integrated into a mixed-signal polar transmitter and meets the 802.11g (54Mbps 64QAM OFDM) spectral mask and EVM requirements with more than 18% average efficiency.
Keywords :
CMOS analogue integrated circuits; power amplifiers; transmitters; 802.11g spectral mask; CMOS inverse class-D power amplifier; CMOS switching PA; EVM requirement; RF process; digital polar transmitters; efficiency 44 percent; mixed-signal polar transmitter; size 65 nm; switching amplifiers; voltage 1 V; CMOS integrated circuits; Capacitance; Inductance; Power generation; Switches; Transistors; Transmitters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
Conference_Location :
Baltimore, MD
ISSN :
1529-2517
Print_ISBN :
978-1-4244-8293-1
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2011.5940656
Filename :
5940656
Link To Document :
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