Title :
1.55-μm bottom-emitting InAlGaAs VCSELs with Al2O3/a-Si thin-film pairs as a top mirror
Author :
Song, Hyun-Woo ; Han, Won Seok ; Kim, Jong-Hee ; Kwon, O-Kyun ; Ju, Young-Gu ; Lee, Jong-Hyun ; Sang-Hee KoPark ; Kang, Seung-Goo
Author_Institution :
Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
We demonstrate a 1.55-μm InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapor deposition. AI2O3-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through single mode fiber are reported in the speed of 2.5 Gbit/s.
Keywords :
III-V semiconductors; MOCVD; alumina; aluminium; amorphous semiconductors; gallium arsenide; indium compounds; laser mirrors; laser transitions; optical communication equipment; optical couplers; optical modulation; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; silicon; surface emitting lasers; 1.55 mum; 2.5 Gbit/s; Al2O3-Si; Al2O3/a-Si thin-film pairs; InAlGaAs-InAlAs; InAlGaAs-InP; InAlGaAs/InAlAs epitaxial layers; bottom-emitting InAlGaAs VCSEL; bottom-side output coupler; direct modulation; metal-organic chemical vapor deposition; single mode fiber; top mirror; vertical-cavity surface-emitting laser; Artificial intelligence; Chemical lasers; Chemical vapor deposition; Fiber lasers; Indium compounds; Indium phosphide; Laser modes; Surface emitting lasers; Transistors; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363285
