DocumentCode
2017858
Title
1.2 μm band high-density multiple-wavelength vertical cavity surface emitting laser array
Author
Uchiyama, Yasuhiro ; Kondo, Takashi ; Takeda, Kazutaka ; Matsutani, Akihiro ; Hashizume, Jiro ; Tajeshi, U. ; Miyamoto, Tomoyuki ; Koyama, Fumio
Author_Institution
Microsyst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Volume
1
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
412
Abstract
A 1.2 μm band densely packed VCSEL array with highly strained GaInAs/GaAs QWs with spatial spacing of 20 μm and wavelength spacing of 0.1 nm is demonstrated for the first time. A large number of VCSELs of over 100 elements could be integrated in a 2 mm long bar.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; quantum well lasers; semiconductor laser arrays; surface emitting lasers; 1.2 mum; GaInAs-GaAs; GaInAs/GaAs QW; VCSEL; spatial spacing; vertical cavity surface emitting laser array; wavelength spacing; Distributed Bragg reflectors; Electrons; Gallium arsenide; Large-scale systems; Optical arrays; Power lasers; Pulse generation; Surface emitting lasers; Vertical cavity surface emitting lasers; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363286
Filename
1363286
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