Title :
Millimeter-wave modeling of isolated MOS substrate network through gate-bulk measurements
Author :
Dormieu, B. ; Charbuillet, C. ; Danneville, F. ; Kauffmann, N. ; Scheer, P.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
This paper presents a novel methodology for the extraction of the substrate network components in n-MOS isolated devices, based on original “Gate-Bulk” structures. Since the main model acceptance criteria is here the frequency dependency, a large part is devoted to accurately model distributed effects in the p-well and the deep n-well layers up to 80 GHz. The main structures are completed with intermediate structures which give a better understanding of the substrate distribution effects.
Keywords :
MIS devices; millimetre wave measurement; semiconductor device models; frequency 80 GHz; gate-bulk measurements; isolated MOS substrate network; millimeter-wave modeling; n-MOS isolated devices; n-well layers; p-well layers; Capacitance; Fingers; Integrated circuit modeling; Logic gates; MOS devices; Radio frequency; Substrates; MOS; RF; deep n-well; isolation; mmW; modeling; substrate;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-8293-1
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2011.5940662
