Title :
Optimization of the processing parameters for pulsed laser deposition of ZnO thin films
Author :
Liu, Z.F. ; Shan, Fukai ; Li, Yuanxin ; Yu, Yun Seop
Author_Institution :
Res. Center of Electron. Ceramics, Dongeui Univ., Busan, South Korea
Abstract :
Summary form only given, as follows. Pulsed laser deposition (PLD) is a rapid, efficient and versatile technique for fabrication of thin films with an atomistic control of the composition. Recently, much effort has been paid to employ PLD for the growth of wide band-gap semiconductor films and heterostuctures The present work describes the pulsed laser deposition of ZnO thin films. The effects of background oxygen pressure on the structural and optical properties of ZnO films have been investigated systemically. It is found that the velocity distribution of droplet and particulate in the plasma plume changes with increasing background oxygen pressure, and at the same time, the dominant growth mechanism of thin films changes. The effects of substrate temperature and pulse repetition rate on the properties of ZnO are discussed. The optimal processing parameters for this study have been found.
Keywords :
II-VI semiconductors; pulsed laser deposition; semiconductor thin films; zinc compounds; ZnO; ZnO thin films; plasma plume; pulse repetition rate; pulsed laser deposition; substrate temperature; Atom lasers; Optical films; Optical pulses; Plasma temperature; Pulsed laser deposition; Semiconductor films; Semiconductor lasers; Semiconductor thin films; Sputtering; Zinc oxide;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1228888