• DocumentCode
    2017956
  • Title

    Optimization of the processing parameters for pulsed laser deposition of ZnO thin films

  • Author

    Liu, Z.F. ; Shan, Fukai ; Li, Yuanxin ; Yu, Yun Seop

  • Author_Institution
    Res. Center of Electron. Ceramics, Dongeui Univ., Busan, South Korea
  • fYear
    2003
  • fDate
    5-5 June 2003
  • Firstpage
    311
  • Abstract
    Summary form only given, as follows. Pulsed laser deposition (PLD) is a rapid, efficient and versatile technique for fabrication of thin films with an atomistic control of the composition. Recently, much effort has been paid to employ PLD for the growth of wide band-gap semiconductor films and heterostuctures The present work describes the pulsed laser deposition of ZnO thin films. The effects of background oxygen pressure on the structural and optical properties of ZnO films have been investigated systemically. It is found that the velocity distribution of droplet and particulate in the plasma plume changes with increasing background oxygen pressure, and at the same time, the dominant growth mechanism of thin films changes. The effects of substrate temperature and pulse repetition rate on the properties of ZnO are discussed. The optimal processing parameters for this study have been found.
  • Keywords
    II-VI semiconductors; pulsed laser deposition; semiconductor thin films; zinc compounds; ZnO; ZnO thin films; plasma plume; pulse repetition rate; pulsed laser deposition; substrate temperature; Atom lasers; Optical films; Optical pulses; Plasma temperature; Pulsed laser deposition; Semiconductor films; Semiconductor lasers; Semiconductor thin films; Sputtering; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
  • Conference_Location
    Jeju, South Korea
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-7911-X
  • Type

    conf

  • DOI
    10.1109/PLASMA.2003.1228888
  • Filename
    1228888