DocumentCode
2017956
Title
Optimization of the processing parameters for pulsed laser deposition of ZnO thin films
Author
Liu, Z.F. ; Shan, Fukai ; Li, Yuanxin ; Yu, Yun Seop
Author_Institution
Res. Center of Electron. Ceramics, Dongeui Univ., Busan, South Korea
fYear
2003
fDate
5-5 June 2003
Firstpage
311
Abstract
Summary form only given, as follows. Pulsed laser deposition (PLD) is a rapid, efficient and versatile technique for fabrication of thin films with an atomistic control of the composition. Recently, much effort has been paid to employ PLD for the growth of wide band-gap semiconductor films and heterostuctures The present work describes the pulsed laser deposition of ZnO thin films. The effects of background oxygen pressure on the structural and optical properties of ZnO films have been investigated systemically. It is found that the velocity distribution of droplet and particulate in the plasma plume changes with increasing background oxygen pressure, and at the same time, the dominant growth mechanism of thin films changes. The effects of substrate temperature and pulse repetition rate on the properties of ZnO are discussed. The optimal processing parameters for this study have been found.
Keywords
II-VI semiconductors; pulsed laser deposition; semiconductor thin films; zinc compounds; ZnO; ZnO thin films; plasma plume; pulse repetition rate; pulsed laser deposition; substrate temperature; Atom lasers; Optical films; Optical pulses; Plasma temperature; Pulsed laser deposition; Semiconductor films; Semiconductor lasers; Semiconductor thin films; Sputtering; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location
Jeju, South Korea
ISSN
0730-9244
Print_ISBN
0-7803-7911-X
Type
conf
DOI
10.1109/PLASMA.2003.1228888
Filename
1228888
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