DocumentCode
2018009
Title
A W-band MMIC vector modulator utilizing tandem couplers and 50nm MHEMTs
Author
Lok, L.B. ; Hwang, C.-J. ; Chong, H.M.H. ; Thayne, I.G. ; Elgaid, K.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
fYear
2009
fDate
Sept. 29 2009-Oct. 1 2009
Firstpage
1251
Lastpage
1254
Abstract
We present design and measurement results for the first W-band (75-110 GHz) monolithic vector modulator employing tandem couplers and 50 nm GaAs metamorphic high electron mobility transistors (MHEMT). Different gate-width MHEMT devices in the cold configuration were fabricated and characterized up to 110 GHz. The 2×50 μm gate geometry device was selected as the best compromise between low off-state capacitive reactance and on-state resistance. On-wafer measurement results revealed less than 15 dB insertion loss and better than 27 dB of isolation across the full 75-110 GHz band.
Keywords
III-V semiconductors; MMIC; gallium arsenide; high electron mobility transistors; modulators; GaAs; MHEMT; W-band MMIC vector modulator; capacitive reactance; frequency 75 GHz to 110 GHz; metamorphic high electron mobility transistors; on-state resistance; size 50 mum; tandem couplers; Couplers; Electrical resistance measurement; Gallium arsenide; Geometry; HEMTs; Insertion loss; Loss measurement; MMICs; MODFETs; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2009. EuMC 2009. European
Conference_Location
Rome
Print_ISBN
978-1-4244-4748-0
Type
conf
Filename
5296151
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