Title :
Structural and optical properties of undoped and Cu-doped ZnO thin films prepared by the pulsed laser deposition at different oxygen pressure
Author :
Sohn, J.Y. ; Kim, B.I. ; Lee, S.D. ; Yu, Y.S.
Author_Institution :
Dept. of Phys., Kyungnam Univ., Masan, South Korea
Abstract :
Summary form only given, as follows. Cu-doped ZnO thin films were deposited on glass substrates by pulsed laser deposition technique using an KrF eximer laser. The films are prepared under the following conditions, laser power is 1 1J/cm2, laser pulse 5Hz, substrate temperature 400 /spl deg/C , target distance 5cm. We have changed the oxygen pressure in chamber from 50 mTorr to 400 mTorr. The orientation and structural properties of the manufactured films are investigated by XRD, the SEM image of the surface and the intersection of specimen. Surface morphology of the films was studied using AFM. The transmittance and PL of the films were measured and the band gap energy according to different ambient pressures of oxygen was obtained. The relation between the structure and the flume pattern was studied.
Keywords :
II-VI semiconductors; X-ray diffraction; copper; energy gap; light transmission; photoluminescence; pulsed laser deposition; scanning electron microscopy; semiconductor thin films; surface morphology; zinc compounds; 400 mtorr; 50 mtorr; O pressure; SEM; X ray diffraction; ZnO:Cu; band gap energy; glass substrates; orientation; photoluminescence; pulsed laser deposition; structural properties; surface morphology; thin films; transmittance; Glass; Manufacturing; Optical films; Optical pulses; Power lasers; Pulsed laser deposition; Sputtering; Surface morphology; Temperature; Zinc oxide;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1228894