Title :
Laterally-Doped Channel(LDC) Structure for Sub-Quarter Micron MOSFETs
Author :
Matsuki, T. ; Asakura, F. ; Saitoh, S. ; Matsumoto, H. ; Fukuma, M. ; Kawamura, N.
Author_Institution :
Microelectronics Research Laboratories, NEC Corporation, Japan
Keywords :
Annealing; Boron; Degradation; Electric resistance; Hot carriers; Immune system; Impurities; MOSFETs; National electric code; Voltage;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.706016
