Title : 
A new compact 3D SiGe 90° hybrid coupler using the meandering TFMS and shielded strip line at 20 GHz
         
        
            Author : 
Hettak, K. ; Morin, G.A. ; Stubbs, M.G.
         
        
            Author_Institution : 
Commun. Res. Centre Canada, Ottawa, ON, Canada
         
        
        
            fDate : 
Sept. 29 2009-Oct. 1 2009
         
        
        
        
            Abstract : 
This paper proposes a new scheme for realizing a compact 3-D 90° hybrid coupler based on the compact meandered thin-film microstrip (TFMS) transmission line and shielded stripline, and successfully demonstrates it by using the multi-layer 0.35 μm SiGe HBT Jazz process. The proposed coupler takes advantage of the multi-level metallization processes offered in SiGe technology. The intrinsic area of the fabricated 3D hybrid coupler is significantly reduced and has shown a size reduction of 95% in circuit area at 20 GHz compared to that of a conventional hybrid coupler using the TFMS configuration. Experimental results are presented in support of the novel 3D compact coupler.
         
        
            Keywords : 
Ge-Si alloys; heterojunction bipolar transistors; metallisation; strip line couplers; SiGe; compact 3D SiGe 90° hybrid coupler; compact meandered thin-film microstrip transmission line; frequency 20 GHz; multilayer SiGe HBT Jazz process; multilevel metallization process; shielded strip line; Coupling circuits; Distributed parameter circuits; Frequency; Germanium silicon alloys; Integrated circuit technology; Microwave devices; Millimeter wave technology; Silicon germanium; Stripline; Strips;
         
        
        
        
            Conference_Titel : 
Microwave Conference, 2009. EuMC 2009. European
         
        
            Conference_Location : 
Rome
         
        
            Print_ISBN : 
978-1-4244-4748-0