DocumentCode
2018112
Title
Application of Back-side Laser Technique on Failure Analysis
Author
Hoe, W.L.C. ; Ren De Lin ; Chee Hong Chong ; Coswin Lin
Author_Institution
United Microelectron. Corp. Ltd., Singapore
fYear
2007
fDate
11-13 July 2007
Abstract
The application of backside emission and laser technique (TIVA/OBIRCH) had been widely used in the semiconductor industry. This paper will discuss the usage of backside laser damage method to aid in this technique on localizing the failure spot. Two applications on backside laser; 1.Memory scramble verification and 2. Yield loss scenario using backside laser to verify the failure hypothesis will also be discussed.
Keywords
failure analysis; integrated circuit reliability; integrated circuit yield; laser beam applications; back-side laser technique; backside emission; backside laser damage; failure analysis; failure spot localization; memory scramble verification; semiconductor industry; yield loss scenario; Costs; Electronics industry; Failure analysis; Glass; Laser applications; Microelectronics; Optimization methods; Semiconductor lasers; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location
Bangalore
Print_ISBN
978-1-4244-1014-9
Type
conf
DOI
10.1109/IPFA.2007.4378099
Filename
4378099
Link To Document