DocumentCode :
2018112
Title :
Application of Back-side Laser Technique on Failure Analysis
Author :
Hoe, W.L.C. ; Ren De Lin ; Chee Hong Chong ; Coswin Lin
Author_Institution :
United Microelectron. Corp. Ltd., Singapore
fYear :
2007
fDate :
11-13 July 2007
Abstract :
The application of backside emission and laser technique (TIVA/OBIRCH) had been widely used in the semiconductor industry. This paper will discuss the usage of backside laser damage method to aid in this technique on localizing the failure spot. Two applications on backside laser; 1.Memory scramble verification and 2. Yield loss scenario using backside laser to verify the failure hypothesis will also be discussed.
Keywords :
failure analysis; integrated circuit reliability; integrated circuit yield; laser beam applications; back-side laser technique; backside emission; backside laser damage; failure analysis; failure spot localization; memory scramble verification; semiconductor industry; yield loss scenario; Costs; Electronics industry; Failure analysis; Glass; Laser applications; Microelectronics; Optimization methods; Semiconductor lasers; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-1014-9
Type :
conf
DOI :
10.1109/IPFA.2007.4378099
Filename :
4378099
Link To Document :
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