• DocumentCode
    2018189
  • Title

    Lens-integrated THz imaging arrays in 65nm CMOS technologies

  • Author

    Sherry, Hani ; Al Hadi, Richard ; Grzyb, Janusz ; Öjefors, Erik ; Cathelin, Andreia ; Kaiser, Andreas ; Pfeiffer, Ullrich R.

  • Author_Institution
    IHCT, Univ. of Wuppertal, Wuppertal, Germany
  • fYear
    2011
  • fDate
    5-7 June 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    THz CMOS imagers integrated with hyperhemispherical Si-lenses are presented and characterized. FPAs are implemented in 65nm CMOS bulk and SOI technologies. Lens-integrated detectors at 0.65 THz show an increase of 15dB and 20dB in SNR compared to front-side illumination for SOI and bulk respectively. The responsivities Rv are increased and a minimum noise-equivalent power NEP of 17pW/√(Hz) is measured for SOI detectors with the lens. THz Images are presented.
  • Keywords
    CMOS image sensors; elemental semiconductors; microwave integrated circuits; silicon; terahertz wave imaging; FPA; SOI technologies; THz CMOS imagers; frequency 0.65 THz; hyperhemispherical Si-lenses; lens-integrated THz imaging arrays; size 65 nm; CMOS integrated circuits; Logic gates; Semiconductor device modeling; Silicon; CMOS SOI; CMOS bulk; Silicon lens; THz electronic systems; THz imaging; square-law detectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
  • Conference_Location
    Baltimore, MD
  • ISSN
    1529-2517
  • Print_ISBN
    978-1-4244-8293-1
  • Electronic_ISBN
    1529-2517
  • Type

    conf

  • DOI
    10.1109/RFIC.2011.5940670
  • Filename
    5940670
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2018189