A Simple and Direct Method for Interface Characterization of OFETs

Author

Srinivas, P. ; Tiwari, Surya Prakash ; Raval, Harshil N. ; Ramesh, R.N. ; Cahyadi, Tommy ; Mhaisalkar, S.G. ; Rao, Valipe Ramgopal

Author_Institution

Nanyang Technol. Univ., Mumbai

fYear

2007

fDate

11-13 July 2007

Abstract

Multi-frequency transconductance technique is successfully applied in this work for the first time for interface characterization of OFETs. Standard charge pumping measurements are used on silicon MOSFETs for the validation of MFT technique. The method is implemented on pentacene as well as the P3HT based OFETs with SiO₂ as the gate dielectric. Our results show interface state densities in the range of 10¹²/cm²/eV for both the samples. The P3HT films are also shown to have additional trap centres which respond to frequencies above 100 kHz. Our results therefore clearly indicate that the MFT technique is indeed a highly useful technique for interface characterization of OFETs.

Keywords

MOSFET; dielectric materials; interface states; organic compounds; semiconductor device measurement; silicon compounds; MFT technique; OFET; P3HT films; SiO₂ - Interface; charge pumping measurements; gate dielectric; interface characterization; interface state densities; multifrequency transconductance technique; organic field effect transistors; pentacene; silicon MOSFET; Charge measurement; Charge pumps; Current measurement; Dielectric measurements; MOSFETs; Measurement standards; OFETs; Pentacene; Silicon; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the

Conference_Location

Bangalore

Print_ISBN

978-1-4244-1014-9

Type

conf

DOI

10.1109/IPFA.2007.4378107

Filename

4378107