Title :
A Simple and Direct Method for Interface Characterization of OFETs
Author :
Srinivas, P. ; Tiwari, Surya Prakash ; Raval, Harshil N. ; Ramesh, R.N. ; Cahyadi, Tommy ; Mhaisalkar, S.G. ; Rao, Valipe Ramgopal
Author_Institution :
Nanyang Technol. Univ., Mumbai
Abstract :
Multi-frequency transconductance technique is successfully applied in this work for the first time for interface characterization of OFETs. Standard charge pumping measurements are used on silicon MOSFETs for the validation of MFT technique. The method is implemented on pentacene as well as the P3HT based OFETs with SiO2 as the gate dielectric. Our results show interface state densities in the range of 1012/cm2/eV for both the samples. The P3HT films are also shown to have additional trap centres which respond to frequencies above 100 kHz. Our results therefore clearly indicate that the MFT technique is indeed a highly useful technique for interface characterization of OFETs.
Keywords :
MOSFET; dielectric materials; interface states; organic compounds; semiconductor device measurement; silicon compounds; MFT technique; OFET; P3HT films; SiO2 - Interface; charge pumping measurements; gate dielectric; interface characterization; interface state densities; multifrequency transconductance technique; organic field effect transistors; pentacene; silicon MOSFET; Charge measurement; Charge pumps; Current measurement; Dielectric measurements; MOSFETs; Measurement standards; OFETs; Pentacene; Silicon; Transconductance;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-1014-9
DOI :
10.1109/IPFA.2007.4378107
