DocumentCode
2018407
Title
High power, high speed, single-mode wafer-bonded AlInGaAs-based LW-VCSELs at 70/spl deg/C
Author
Mehta, M. ; Robbins, V. ; Lester, S. ; Mars, D. ; Bour, D. ; Mertz, F. ; Miller, J. ; Bowers, J.E.
Author_Institution
Agilent Technol., Palo Alto, CA
fYear
2006
fDate
5-10 March 2006
Abstract
We present wafer-bonded long-wavelength VCSEL operation between 1300 nm and 1330 nm demonstrating 2.5 mW single mode output power at 20degC and 1.7 mW at 70degC. We also show small signal 3-dB bandwidths greater than 10 GHz and 8 GHz at 20degC and 70degC respectively
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; laser cavity resonators; laser modes; optical fibre communication; semiconductor lasers; surface emitting lasers; wafer bonding; 1.7 mW; 1300 nm; 2.5 mW; 20 degC; 70 degC; AlInGaAs; high power VCSEL; high speed VCSEL; long-wavelength-VCSEL; single-mode VCSEL; wafer-bonding; Bandwidth; Distributed Bragg reflectors; Gallium arsenide; Indium phosphide; Optical surface waves; Power generation; Semiconductor lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference, 2006 and the 2006 National Fiber Optic Engineers Conference. OFC 2006
Conference_Location
Anaheim, CA
Print_ISBN
1-55752-803-9
Type
conf
DOI
10.1109/OFC.2006.215937
Filename
1636968
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