DocumentCode :
2018469
Title :
A fully integrated 60GHz distributed transformer power amplifier in bulky CMOS 45nm
Author :
Essing, Jaap ; Mahmoudi, Reza ; Pei, Yu ; Van Roermund, Arthur
Author_Institution :
Mixed-signal Microelectron., Eindhoven Univ. of Technol., Eindhoven, Netherlands
fYear :
2011
fDate :
5-7 June 2011
Firstpage :
1
Lastpage :
4
Abstract :
This paper describes a fully integrated differential power amplifier (PA) operating at 60 GHz ISM band and implemented in 45nm CMOS technology. The PA is based on a distributed active transformer (DAT) topology which enables simultaneous power combining and realization of an efficient impedance matching. To cope with the asymmetric nature of DAT, resulting in common-mode and unequal differential voltage-swings at its input-ports, this paper presents two universal methods which do not impose any layout restrictions and layout adjustments. The realized PA achieves 13.2dBm output power at 1dB compression, a saturated output power of 16.3dBm, a PAE of 8.7% and 18.7dBm OIP3, while consuming 178mA at 1.8V.
Keywords :
CMOS integrated circuits; impedance matching; power amplifiers; power combiners; transformers; CMOS; ISM band; common-mode; current 178 mA; distributed active transformer topology; frequency 60 GHz; impedance matching; integrated distributed transformer power amplifier; power combining; size 45 nm; voltage 1.8 V; CMOS integrated circuits; CMOS technology; Circuit faults; Gain; Inductors; Power generation; Topology; 60GHz; CMOS integrated circuits; Distributed active transformer; Power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
Conference_Location :
Baltimore, MD
ISSN :
1529-2517
Print_ISBN :
978-1-4244-8293-1
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2011.5940684
Filename :
5940684
Link To Document :
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