DocumentCode
2018570
Title
Thin film inverted MSM photodetector with top bonding pads for nano paste metallization
Author
Kondo, Taka-Yuki ; Onishi, Hajime ; Nomura, Hiroshi ; Kaneko, Tetsuya ; Shimoda, Tatsuya
Author_Institution
Seiko Epson Corp., Nagano, Japan
Volume
2
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
463
Abstract
This study has demonstrated the assembly of a thin film inverted MSM photodetector (I-MSM) on a Si CMOS TIA in a monolithic dimension. The I-MSM has top bonding pads and is connected with the TIA using nano paste metallization. Operation at 622 M-bit/s with optical input has been successfully demonstrated.
Keywords
CMOS integrated circuits; assembling; integrated optoelectronics; metal-semiconductor-metal structures; metallisation; photodetectors; thin film devices; 622 Mbit/s; Si; Si CMOS; assembly; inverted MSM photodetector; monolithic dimension; nanopaste metallization; optoelectronics integrated circuit fabrication; thin film photodetector; top bonding pads; transimpedance amplifier; Assembly; Atherosclerosis; Electrodes; Gallium arsenide; Metallization; Optoelectronic devices; Photodetectors; Polyimides; Transistors; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363313
Filename
1363313
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