DocumentCode
2018670
Title
GRIN Lens-Coupled Top-Illuminated Photodetectors for High-Power Applications
Author
Joshi, Abhay ; Becker, Don
Author_Institution
Discovery Semicond. Inc., Evving
fYear
2007
fDate
3-5 Oct. 2007
Firstpage
18
Lastpage
20
Abstract
We report a GRIN Iens-coupled top-illuminated InGaAs photodectector with a 1dB compression current >50mA and an amplifier-free RF output of 12.5 dBm. The optical mode shaping by the GRIN lens enhances the photodetector power handling capacity.
Keywords
III-V semiconductors; gallium arsenide; gradient index optics; indium compounds; lenses; microwave photonics; optical pulse shaping; photodetectors; GRIN lens-coupled photodetector; InGaAs; amplifier-free RF output; optical mode shaping; power handling capacity; top-illuminated photodetectors; High speed optical techniques; Indium gallium arsenide; Lenses; Optical saturation; Photoconductivity; Photodetectors; Photodiodes; Radio frequency; Radiofrequency amplifiers; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Photonics, 2007 IEEE International Topical Meeting on
Conference_Location
Victoria, BC
Print_ISBN
978-1-4244-1167-2
Electronic_ISBN
978-1-4244-1168-9
Type
conf
DOI
10.1109/MWP.2007.4378124
Filename
4378124
Link To Document