Title :
GRIN Lens-Coupled Top-Illuminated Photodetectors for High-Power Applications
Author :
Joshi, Abhay ; Becker, Don
Author_Institution :
Discovery Semicond. Inc., Evving
Abstract :
We report a GRIN Iens-coupled top-illuminated InGaAs photodectector with a 1dB compression current >50mA and an amplifier-free RF output of 12.5 dBm. The optical mode shaping by the GRIN lens enhances the photodetector power handling capacity.
Keywords :
III-V semiconductors; gallium arsenide; gradient index optics; indium compounds; lenses; microwave photonics; optical pulse shaping; photodetectors; GRIN lens-coupled photodetector; InGaAs; amplifier-free RF output; optical mode shaping; power handling capacity; top-illuminated photodetectors; High speed optical techniques; Indium gallium arsenide; Lenses; Optical saturation; Photoconductivity; Photodetectors; Photodiodes; Radio frequency; Radiofrequency amplifiers; Stimulated emission;
Conference_Titel :
Microwave Photonics, 2007 IEEE International Topical Meeting on
Conference_Location :
Victoria, BC
Print_ISBN :
978-1-4244-1167-2
Electronic_ISBN :
978-1-4244-1168-9
DOI :
10.1109/MWP.2007.4378124
