DocumentCode
2018699
Title
High power conversion efficiency 970 nm aluminum-free diode lasers
Author
Kanskar, M. ; Dai, Zhijiang ; Earles, T. ; Forbes, David ; Nesnidal, M. ; Stiers, E.
Author_Institution
Alfalight, Inc., Madison, WI, USA
Volume
2
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
475
Abstract
This study presents aluminum-free diode lasers that demonstrate high power conversion efficiency at 970 nm. Al-free active diode lasers, i.e. InGaAs(P)/InGaP/GaAs have superior power-conversion efficiency compared to conventional Al-containing devices due to their low differential series resistance and higher thermal conductivity.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; thermal conductivity; 970 nm; InGaAs(P)/InGaP/GaAs lasers; InGaAsP-InGaP-GaAs; active diode lasers; aluminum-free diode lasers; differential series resistance; power conversion efficiency; thermal conductivity; Capacitive sensors; Conducting materials; Diode lasers; Equations; Optical materials; Optical scattering; Optical waveguides; Power conversion; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363319
Filename
1363319
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