DocumentCode :
2018811
Title :
Transformer topologies for mmW integrated circuits
Author :
Leite, Bernardo ; Kerhervé, Eric ; Bégueret, Jean-Baptiste ; Belot, Didier
Author_Institution :
IMS Lab., Univ. of Bordeaux, Talence, France
fYear :
2009
fDate :
Sept. 29 2009-Oct. 1 2009
Firstpage :
181
Lastpage :
184
Abstract :
Layout topologies for millimeter-wave transformers are presented. Transformers whose windings present different shapes and relative position are compared in terms of inductance, quality-factors, coupling coefficient and minimum insertion loss. We present measurement results of transformers implemented in a 65 nm CMOS technology. It is observed that octagonal transformers present better Q-factors than square transformers, and that transformers whose primary is rotated by 180 degrees present a partial resonance.
Keywords :
CMOS integrated circuits; millimetre wave devices; transformers; CMOS technology; Q-factors; millimeter-wave transformers; mmW integrated circuits; octagonal transformers; size 65 nm; square transformers; transformer topologies; CMOS technology; Circuit topology; Coupling circuits; Inductance; Insertion loss; Integrated circuit measurements; Millimeter wave integrated circuits; Millimeter wave measurements; Millimeter wave technology; Shape;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2009. EuMC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4748-0
Type :
conf
Filename :
5296187
Link To Document :
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