Title :
Wideband and high speed response in saturable absorption low-temperature grown Be-doped InGaAs films
Author :
Okuno, Tsuyoshi ; Masumoto, Yasuaki ; Takahashi, Ryo ; Bando, Hiroyuki ; Okamoto, Hiroshi
Author_Institution :
Dept. of Appl. Phys. & Chem., Univ. of Electro-Commun., Tokyo, Japan
Abstract :
Wideband (1500 nm down to 1300 nm), high speed absorption recovery time (2-3 ps) and optical absorption saturation energy density (120 ∼ 150 μJ/cm2) were obtained for low temperature (250°C) MBE-grown and Be-doped In0.53Ga0.47As bulk-like epifilm.
Keywords :
III-V semiconductors; beryllium; gallium arsenide; high-speed optical techniques; indium compounds; molecular beam epitaxial growth; optical saturable absorption; semiconductor epitaxial layers; semiconductor growth; 1300 to 1500 nm; 2 to 3 ps; 250 degC; Be-doped InGaAs films; InGaAs:Be; MBE-grown epifilms; bulk-like epifilm; high speed response; low temperature-grown epifilms; low-temperature grown films; saturable absorption; wideband response; Absorption; High speed optical techniques; Indium gallium arsenide; Molecular beam epitaxial growth; Nonlinear optics; Optical buffering; Optical films; Optical saturation; Temperature; Wideband;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363324
