Title :
Development of planar magnetotransistor design by three-dimensional device-technological modeling
Author :
Kozlov, Anton V. ; Tikhonov, Robert D. ; Polomoshnov, Sergey A.
Author_Institution :
Moscow Inst. of Electron. Technol., Tech. Univ., Moscow, Russia
fDate :
June 30 2010-July 4 2010
Abstract :
The three-dimensional model of planar dual-collector bipolar magnetotransistor has been developed by the device-technological modeling Synopsys Sentaurus system. Relative current sensitivity of the magnetotransistor in the chosen mode has been calculated. The mechanisms of magnetic sensitivity increase of existing planar magnetotransistors have been considered.
Keywords :
bipolar transistors; magnetoelectronics; semiconductor device models; Synopsys Sentaurus system; magnetic sensitivity; planar dual-collector bipolar magnetotransistor; planar magnetotransistor design; relative current sensitivity; three-dimensional device-technological modeling; Seminars; Substrates; Planar magnetotransistor; device-technological modeling; relative current magnetosensitivity;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-6626-9
DOI :
10.1109/EDM.2010.5568825
