Title :
Power limiter/low-noise amplifier of C-band
Author :
Platonov, Sergey V. ; Osipov, Andrey M. ; Kozlovsky, Eduard Y.
Author_Institution :
Yaroslav-the-Wise Novgorod State Univ., Veliky Novgorod, Russia
fDate :
June 30 2010-July 4 2010
Abstract :
The article describes designing of a low-noise amplifier with protection of input stages against influence input CW power to 2 W working in a range of frequencies 3...8 GHz with gain not less than 32 dB. The amplifier is made of the quasi-monolithic circuit. The basic stages of design, modeling of amplifier operation and its implementation are described. Comparative results of simulated and measured values of the developed amplifier are presented.
Keywords :
low noise amplifiers; microwave amplifiers; microwave limiters; amplifier design; amplifier implementation; amplifier operation modeling; frequency 3 GHz to 8 GHz; input stage protection; low-noise amplifier; power 2 W; power limiter; quasimonolithic circuit; Buffer layers; Extraterrestrial measurements; Logic gates; Radio frequency; Transistors; Low-noise amplifier; power limiter; transistor;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-6626-9
DOI :
10.1109/EDM.2010.5568829
