Non-destructive high-frequency of two-harmonic method for automatic local measurements of charge carrier concentration profiles in bulk semiconductor structures and two-dimensional nanostructures

The device described operates on the basis of the two-harmonic method and makes it possible to measure profiles of charge carrier concentration from 10¹² to 10²⁰ cm^-3 to an accuracy within ~2 and -5% in linear and logarithmic scales, respectively, in submicron layers with high impurity concentration gradients near interfaces and surfaces in complex nanostructures at a positive bias voltage. The resolution is ~10 μm for a 150-μm-diameter mercury probe moving along the surface of the measured structure.