Title :
A 22µW, 2.0GHz FBAR oscillator
Author :
Nelson, Andrew ; Hu, Julie ; Kaitila, Jyrki ; Ruby, Richard ; Otis, Brian
Author_Institution :
Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA
Abstract :
We present a 22μW, 2.0GHz FBAR oscillator - the lowest power reported to date for a GHz-range oscillator of this type. Low power consumption is achieved through co-design with a high Rp FBAR resonator and a weakly-forward biased bulk connection. An oscillator with a standard bulk connection was fabricated for comparison. The chip was fabricated in a 0.18μm CMOS process. The weakly-forward biased bulk led to a 41% reduction in power dissipation. The measured phase noise is -121dBc/Hz at a 100kHz offset.
Keywords :
CMOS analogue integrated circuits; UHF oscillators; UHF resonators; acoustic resonators; bulk acoustic wave devices; phase noise; CMOS process; FBAR oscillator; FBAR resonator; film bulk acoustic resonator oscillator; frequency 2.0 GHz; phase noise; power 22 muW; power consumption; power dissipation; size 0.18 mum; weakly-forward biased bulk led; Film bulk acoustic resonators; Frequency measurement; Impedance; Phase noise; Resonant frequency; Transistors; Film bulk acoustic resonators; Low voltage; Oscillators; Phase noise; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-8293-1
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2011.5940708
