Title :
Investigation of doping profile effect on characteristics of ion-implanted GaAs MESFET
Author :
Shestakov, Alexander K. ; Zhuravlev, Konstantin S. ; Arykov, Vadim S. ; Kagadei, Valery A.
Author_Institution :
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fDate :
June 30 2010-July 4 2010
Abstract :
Ion-implanted GaAs MESFET was modeled and dependence of MESFET characteristics on doping profile parameters was found. Dependence of transistors characteristics on doping profile parameters variation was investigated.
Keywords :
Schottky gate field effect transistors; doping profiles; gallium arsenide; ion implantation; GaAs; MESFET characteristics; doping profile effect; doping profile parameters; ion-implanted MESFET; Doping profiles; Logic gates; Three dimensional displays; MESFET; TCAD; modeling;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-6626-9
DOI :
10.1109/EDM.2010.5568833
