Title :
Microwave method for contactless determination of charge carrier concentration and Hall resistance in semiconductor nanostructures
Author :
Uvarov, Eugenie I. ; Kornilovich, A.A.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
fDate :
June 30 2010-July 4 2010
Abstract :
A microwave method is developed to enable the oscillations of power due to the Shubnikov-de Haas effect to be measured in the microwave wave reflected from a sample. On the basis of these data, the charge carrier concentration and Hall-resistance in low-dimensional semiconductor systems containing degenerate electron gas localized within a -100Å thick layer can be determined with an accuracy of ~0.5%.
Keywords :
Hall mobility; Shubnikov-de Haas effect; carrier density; electron gas; high-frequency effects; microwave measurement; nanostructured materials; semiconductor materials; Hall resistance; Shubnikov-de Haas effect; charge carrier concentration; contactless microwave method; localized degenerated electron gas; low-dimensional semiconductor systems; reflected microwave wave; semiconductor nanostructure; Niobium; Seminars; Contactless microwave method; Hall resistance determination; carrier concentration; semiconductor nanostructures;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-6626-9
DOI :
10.1109/EDM.2010.5568834
