• DocumentCode
    2019199
  • Title

    Research of fractal thick-film elements frequency responses

  • Author

    Ushakov, Pyotr A. ; Maksimov, Cyril O. ; Filippov, Andrey V.

  • Author_Institution
    Izhevsk State Tech. Univ., Izhevsk, Russia
  • fYear
    2010
  • fDate
    June 30 2010-July 4 2010
  • Firstpage
    165
  • Lastpage
    167
  • Abstract
    The results of frequency responses measurements of two-terminal thick-film elements on the basis of RC-elements with distributed parameters with fractal impedance are presented. The given elements were synthesized for implementation of constant phase input impedance on level φv = 36.5° ± 2.5° (frequency scale v = 0.4 ± 0.03) over the 2.5-decade operating frequency range. The thick-film element construction and the used materials of layers are represented. The statistical estimation of input impedance phase-frequency response (PFR) parameters of the experimental samples is carried out. It is shown that measured PFR parameters well coincide with a synthesis preset PFR parameters, but have a narrower phase persistence frequency band. The reasons for difference of the experimental performance from the theoretical one are defined by circuit simulation. The tasks, solution to which will allow to create elements with the fractal impedance preset parameters of the fractional order integration and derivation devices, are set.
  • Keywords
    RC circuits; frequency response; statistical analysis; thick film circuits; RC-elements; circuit simulation; constant phase input impedance; distributed parameters; fractal impedance; fractal thick-film elements frequency responses; frequency responses measurements; input impedance phase-frequency response parameters; statistical estimation; thick-film element construction; two-terminal thick-film elements; Construction industry; Fractal impedance; fractal RC-element with distributed parameters; thick-film fractal RC-element;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    978-1-4244-6626-9
  • Type

    conf

  • DOI
    10.1109/EDM.2010.5568837
  • Filename
    5568837