A 10 Gbit/s Si CMOS transimpedance amplifier with an integrated MSM photodetector for optical interconnections

Author

Song, Indal ; Seo, Sang-Woo ; Hyun, Seokhun ; Kim, Daeik ; Huang, Sa ; Brooke, Martin ; Jokerst, Nan Marie ; Brown, April

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

2

fYear

2004

fDate

7-11 Nov. 2004

Firstpage

517

Abstract

A wideband preamplifier is designed and fabricated using a 0.18 μm CMOS technology. The amplifier is heterogeneously integrated with a thin film InGaAs inverted MSM photodetector, and a successful demonstration at a bit rate of 10 Gbps is reported.

Keywords

CMOS integrated circuits; III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical interconnections; photodetectors; preamplifiers; semiconductor thin films; wideband amplifiers; 0.18 mum; 10 Gbit/s; CMOS technology; InGaAs; MSM photodetector; Si; Si CMOS amplifier; integrated photodetector; inverted MSM photodetector; optical interconnections; thin film photodetector; transimpedance amplifier; wideband preamplifier; Broadband amplifiers; CMOS technology; Indium gallium arsenide; Optical amplifiers; Optical interconnections; Photodetectors; Preamplifiers; Semiconductor optical amplifiers; Transistors; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE

Print_ISBN

0-7803-8557-8

Type

conf

DOI

10.1109/LEOS.2004.1363340

Filename

1363340