Title :
A 10 Gbit/s Si CMOS transimpedance amplifier with an integrated MSM photodetector for optical interconnections
Author :
Song, Indal ; Seo, Sang-Woo ; Hyun, Seokhun ; Kim, Daeik ; Huang, Sa ; Brooke, Martin ; Jokerst, Nan Marie ; Brown, April
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
A wideband preamplifier is designed and fabricated using a 0.18 μm CMOS technology. The amplifier is heterogeneously integrated with a thin film InGaAs inverted MSM photodetector, and a successful demonstration at a bit rate of 10 Gbps is reported.
Keywords :
CMOS integrated circuits; III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical interconnections; photodetectors; preamplifiers; semiconductor thin films; wideband amplifiers; 0.18 mum; 10 Gbit/s; CMOS technology; InGaAs; MSM photodetector; Si; Si CMOS amplifier; integrated photodetector; inverted MSM photodetector; optical interconnections; thin film photodetector; transimpedance amplifier; wideband preamplifier; Broadband amplifiers; CMOS technology; Indium gallium arsenide; Optical amplifiers; Optical interconnections; Photodetectors; Preamplifiers; Semiconductor optical amplifiers; Transistors; Wideband;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363340
